BSP135 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS^® Small-Signal Transistor
q V_DS 600 V
q I_D
0.100 A
R q _DS(on) 60 Ω
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in V_GS(th)
BSP 135
Type
Ordering
Code
Tape and Reel Information Pin Configuration Marking Package
1234
BSP 135 Q62702-S655 E6327: 1000 pcs/reel
G D S D BSP 135 SOT-223
BSP 135 Q67000-S283 E6906: 1000 pcs/reel
V_GS(th) selected in groups:
(see page 219)
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, R_GS = 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, T_A = 44 ˚C
Pulsed drain current,
T_A = 25 ˚C
Max. power dissipation, T_A = 25 ˚C
Operating and storage temperature range
Symbol
V_DS
V_DGR
V_GS
V_gs
I_D
I_{D puls}
P_tot
T_j, T_stg
Values
600
600
± 14
± 20
0.100
0.30
1.7
– 55 … + 150
Unit
V
A
W
˚C
Thermal resistance ¹⁾ chip-ambient
R_thJA
72
chip-soldering point R_thJS R_thJS
12
DIN humidity category, DIN 40 040
–
E
K/W
–
IEC climatic category, DIN IEC 68-1
–
55/150/56
1) _{Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm}2 _{copper area for drain connection.}
Semiconductor Group
1
09.96