BSM75GD120DN2 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)

BSM 75 GD 120 DN2
IGBT Power Module
Preliminary data
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 75 GD 120 DN2
V_CE I_C
Package
1200V 103A ECONOPACK 3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 80 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 80 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
R_thJC
R_thJCD
V_is
-
-
-
-
Ordering Code
C67070-A2516-A67
Values
Unit
1200
V
1200
± 20
A
103
75
206
150
W
520
+ 150
°C
-55 ... + 150
≤ 0.235
K/W
≤ 0.55
2500
Vac
16
mm
11
F
-
55 / 150 / 56
Semiconductor Group
1
Mar-27-1996