BSM50GD120DN2E3226 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)

BSM 50 GD120DN2E3226
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal
Type
V_CE I_C
BSM 50 GD120DN2E3226 1200V 50A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 80 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 80 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Package
ECONOPACK 2
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R_thJC
R_thJCD
V_is
-
-
-
-
Semiconductor Group
1
Ordering Code
C67070-A2514-A67
Values
Unit
1200
V
1200
± 20
A
50
45
100
90
W
350
+ 150
°C
-55 ... + 150
≤ 0.35
K/W
≤ 0.7
2500
Vac
16
mm
11
F
sec
55 / 150 / 56
Jan-10-1997