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BSM35GB120DN2 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) | |||
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BSM 35 GB 120 DN2
IGBT Power Module
Preliminary data
⢠Half-bridge
⢠Including fast free-wheeling diodes
⢠Doubled diode area
⢠Package with insulated metal base plate
Type
BSM 35 GB 120 DN2
VCE IC
1200V 50A
Package
HALF-BRIDGE 1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kâ¦
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67070-A2111-A70
Values
Unit
1200
V
1200
± 20
A
50
35
100
70
W
280
+ 150
°C
-55 ... + 150
⤠0.44
K/W
⤠0.8
2500
Vac
20
mm
11
F
-
55 / 150 / 56
Semiconductor Group
1
Mar-28-1996
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