BSM15GD60DN2 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

IGBT Power Module
BSM 15 GD 60 DN2
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 15 GD 60 DN2
V_CE I_C
600V 15A
Package
ECONOPACK 1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 40 °C
Pulsed collector current, t_p = 1 ms
T_C = 40 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
R_thJC
R_thJCD
V_is
-
-
-
-
Ordering Code
C67076-A2510-A67
Values
Unit
600
V
600
± 20
A
15
30
W
50
+ 125
°C
-55 ... + 150
≤ 2.9
K/W
≤ 3.5
2500
Vac
12
mm
10
F
sec
40 / 125 / 56
Semiconductor Group
1
Jan-09-1997