BSM150GAL120DN2E3166 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

BSM150GAL120DN2E3166
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
V_CE I_C
Package
Ordering Code
BSM150GAL120DN2E31661200V 210A HALF BRIDGE GAL 2 C67076-A2112-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 80 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 80 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
R_thJC
R_thJCD
RTHJCDC
V_is
-
-
-
-
Values
Unit
1200
V
1200
± 20
A
210
150
420
300
W
1250
+ 150
°C
-55 ... + 150
≤ 0.1
K/W
≤ 0.25
≤ 0.125
4000
Vac
20
mm
11
F
sec
55 / 150 / 56
Semiconductor Group
1
Nov-08-1996