BSM111AR Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIMOPAC Module (Power module Single switch N channel Enhancement mode)

SIMOPAC^® Module
V_DS = 100 V
I _D = 200 A
R _DS(on) = 8.5 mΩ
q Power module
q Single switch
q N channel
q Enhancement mode
q Package with insulated metal base plate
q Package outline/Circuit diagram: 1¹⁾
BSM 111 AR
Type
BSM 111 AR
Ordering Code
C67076-S1013-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, R_GS = 20 kΩ
Gate-source voltage
Continuous drain current, T_C = 25 ˚C
Pulsed drain current, T_C = 25 ˚C
Operating and storage temperature range
Power dissipation, T_C = 25 ˚C
Thermal resistance
Chip-case
Insulation test voltage²⁾, t = 1 min.
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_DS
V_DGR
V_GS
I_D
I_{D puls}
T_j, T_stg
P_tot
R_thJC
V_is
–
–
–
–
Values
100
100
± 20
200
600
– 55 … + 150
700
≤ 0.18
2500
16
11
F
55/150/56
Unit
V
A
˚C
W
K/W
V_ac
mm
–
1) _{See chapter Package Outline and Circuit Diagrams.}
2) _{Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with}
DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
24
03.96