BSM100GB120DN2K Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module
BSM 100 GB 120 DN2K
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 100 GB 120 DN2K
V_CE I_C
Package
1200V 145A HALF-BRIDGE 1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 80 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 80 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
R_thJC
R_thJCD
V_is
-
-
-
-
Ordering Code
C67070-A2107-A70
Values
Unit
1200
V
1200
± 20
A
145
100
290
200
W
700
+ 150
°C
-55 ... + 150
≤ 0.18
K/W
≤ 0.36
2500
Vac
20
mm
11
F
-
55 / 150 / 56
Semiconductor Group
1
Mar-29-1996