BGX50A Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip)

Silicon Switching Diode Array
q Bridge configuration
q High-speed switch diode chip
BGX 50 A
Type
BGX 50 A
Marking
U1s
Ordering Code
(tape and reel)
Q62702-G38
Pin Configuration
Package¹⁾
SOT-143
Maximum Ratings per Diode
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Total power dissipation, TS = 74 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
VR
VRM
IF
Ptot
Tj
Tstg
Values
Unit
50
V
70
140
mA
210
mW
150
˚C
– 65 … + 150
Rth JA
Rth JS
≤ 640
K/W
≤ 360
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91