BGA427 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable)

BGA 427
Si-MMIC-Amplifier in SIEGET^® 25-Technologie
Preliminary data
• Cascadable 50 Ω-gain block
• Unconditionally stable
• Gain |S₂₁|² = 18,5 dB at 1.8 GHz (appl.1)
gain |S₂₁|² = 22 dB at 1.8 GHz (appl.2)
IP_3out = +7 dBm at 1.8 GHz (V_D=3V, I_D=9.4mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• typical device voltage V_D = 2 V to 5 V
• Reverse isolation < 35 dB (appl.2)
3
4
2
1
VPS05605
3
+V
Circuit Diagram
4
OUT
1
IN
2
GND
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
BGA 427 BMs Q62702-G0067 1, IN 2, GND 3, +V
4, Out
Maximum Ratings
Parameter
Symbol
Value
Device current
Device voltage
Total power dissipation, T_S ≤ tbd °C
R_F input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
I_D
V_D,+V
P_tot
P_RFin
T_j
T_A
T_stg
R_thJS
25
6
150
-10
150
-65 ...+150
-65 ...+150
≤ tbd
EHA07378
Package
SOT-343
Unit
mA
V
mW
dBm
°C
K/W
1) T_S is measured on the emitter (GND) lead at the soldering point to the pcb
SSeemmicioconndduuctcotor ^rGGrorouupp
1¹
Au ₁-1₉₉1₈-1_-19₁9_-08₁