BGA425 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 Ω block LNA / MIX Unconditionally stable)

Si-MMIC-Amplifier in SIEGET^® 25-Technologie
Preliminary data
• Multifunctional casc. 50 Ω block (LNA / MIX)
• Unconditionally stable
• Gain |S₂₁|² = 18.5 dB at 1.8 GHz (appl.1)
gain |S₂₁|² = 22 dB at 1.8 GHz (appl.2)
IP_3out = +7 dBm at 1.8 GHz (V_D=3V,I_D=9.5mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Reverse isolation >28 dB (appl.1) >35 dB (appl.2)
• typical device voltage V_D = 2 V to 5 V
Tape loading orientation
BGA 425
3
4
2
1
VPS05605
Circuit Diagram
6
+V
3
OUTA
4
IN
1
OUTB
ESD: Electrostatic discharge sensitive device,
observe handling precaution!
2, 5
GND
PIN Configuration
Type
Marking Ordering Code Package 1, Out B 2, GND
BGA 425 BMs Q62702-G0058 SOT-343 4, IN
5, GND
EHA07371
3, Out A
6, +V
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T_S ≤ tbd °C
R_F input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
I_D
V_D,+V
P_tot
P_RFin
T_j
T_A
T_stg
Value
25
6
150
-10
150
-65 ...+150
-65 ...+150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point ¹⁾
R_thJS
≤ tbd
K/W
1) T_S is measured on the ground lead at the soldering point to the pcb
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