BGA420 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 Ω-gain block Unconditionally stable)

BGA 420
Si-MMIC-Amplifier in SIEGET^® 25-Technologie
Preliminary data
• Cascadable 50 Ω-gain block
• Unconditionally stable
• Gain |S₂₁|² = 13 dB at 1.8 GHz
IP_3out = +9 dBm at 1.8 GHz
(V_D = 3 V, I_D = typ. 6.4 mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
3
4
2
1
VPS05605
V_D
4
Circuit Diagram
3
OUT
1
IN
2
GND
EHA07385
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
BGA 420 BLs Q62702-G0057 1, IN 2, GND 3, OUT 4, VD
Package
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Device current
Device voltage
Total power dissipation, TS ≤ tbd °C
R_F input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
I_D
V_D
P_tot
P_RFin
T_j
T_A
T_stg
R_thJS
15
6
90
0
150
-65 ...+150
-65 ...+150
≤ tbd
mA
V
mW
dBm
°C
K/W
1) T_S is measured on the emitter (GND) lead at the soldering point to the pcb
SSeemmicioconndduuctcotor ^rGGrorouupp
1¹
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