BFY183 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

HiRel NPN Silicon RF Transistor
BFY 183
Features
Â¥ HiRel Discrete and Microwave Semiconductor
Â¥ For low noise, high gain broadband amplifiers at
collector currents from 2 mA to 30 mA
Â¥ Hermetically sealed microwave package
Â¥ f_T = 8 GHz, F = 2.3 dB at 2 GHz
Â¥
qualified
Â¥ ESA/SCC Detail Spec. No.: 5611/006
Micro-X1
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFY 183 (ql)
Marking Ordering Code
-
see below
Pin Configuration
C EBE
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1609
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1713
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Symbol Limit Values
Unit
Collector-emitter voltage
Collector-emitter voltage, V_BE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S £ 99 °C ²⁾
Junction temperature
Operating temperature range
Storage temperature range
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_op
T_stg
12
V
20
V
20
V
2
V
65
mA
5 ¹⁾
mA
450
mW
200
°C
- 65 É + 200
°C
- 65 É + 200
°C
Thermal Resistance
Junction soldering point ²⁾
R_{th JS}
< 255
K/W
1) _{The maximum permissible base current for VFBE measurements is 20 mA (spot measurement duration < 1 s).}
2) _{TS is measured on the collector lead at the soldering point to the pcb.}
Semiconductor Group
1
Draft A03 1998-04-01