BFY180 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)

HiRel NPN Silicon RF Transistor
BFY 180
Features
Â¥ HiRel Discrete and Microwave Semiconductor
Â¥ For low power amplifiers at collector currents from
0.2 to 2.5 mA
Â¥ Hermetically sealed microwave package
Â¥ f_T = 6.5 GHz, F = 2.6 dB at 2 GHz
Â¥
qualified
Â¥ ESA/SCC Detail Spec. No.: 5611/006
Micro-X1
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFY 180 (ql)
Marking Ordering Code
-
see below
Pin Configuration
C EBE
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q97301013
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q97111419
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Symbol Limit Values
Unit
Collector-emitter voltage
Collector-emitter voltage, V_BE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S £ 176 °C ²⁾
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_op
T_stg
8
V
15
V
15
V
2
V
4
mA
0.5 ¹⁾
mA
30
mW
200
°C
- 65 É + 200
°C
- 65 É + 200
°C
Junction soldering point ²⁾
R_{th JS}
< 805
K/W
1) _{The maximum permissible base current for VFBE measurements is 3 mA (spot-measurement duration < 1 s).}
2) _{TS is measured on the collector lead at the soldering point to the pcb.}
Semiconductor Group
1
Draft A04 1998-04-01