BFR35AP Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
0.5mA to 20mA
BFR 35AP
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 35AP GEs
Q62702-F938
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S ≤ 48 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
1) T_S is measured on the collector lead at the soldering point to the pcb.
Values
15
20
20
2.5
30
4
280
150
- 65 ... + 150
- 65 ... + 150
≤ 365
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996