BFQ193 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• f_T = 7.5 GHz
F = 1.3 dB at 900 MHz
BFQ 193
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
BFQ 193
RCs
Q62702-F1312
1=B 2=C 3=E
Package
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S ≤ 93 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
Values
12
20
2
80
10
600
150
- 65 ... + 150
- 65 ... + 150
Unit
V
mA
mW
°C
≤ 95
K/W
Semiconductor Group
1
Dec-13-1996