BFP23 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)

PNP Silicon Transistors
with High Reverse Voltage
q High breakdown voltage
q Low collector-emitter saturation voltage
q Low capacitance
q Complementary types: BFP 22, BFP 25 (NPN)
BFP 23
BFP 26
321
Type
BFP 23
BFP 26
Marking
–
Ordering Code
(tape and reel)
Q62702-F622
Q62702-F722
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case²⁾
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Rth JA
Rth JC
Pin Configuration
1
2
3
E
B
C
Package¹⁾
TO-92
Values
Unit
BFP 23 BFP 26
200
300
V
200
300
6
200
mA
500
100
200
625
mW
150
˚C
– 65 … + 150
≤ 200
K/W
≤ 135
1) _{For detailed information see chapter Package Outlines.}
2) _{Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.}