BFN20 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

NPN Silicon High-Voltage Transistor
q Suitable for video output stages in TV sets
and switching power supplies
q High breakdown voltage
q Low collector-emitter saturation voltage
q Low capacitance
q Complementary type: BFN 21 (PNP)
BFN 20
Type
BFN 20
Marking
DC
Ordering Code
(tape and reel)
Q62702-F1058
Pin Configuration
1
2
3
B
C
E
Package¹⁾
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage, RBE = 2.7 kΩ
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation, TS = 120 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
VCE0
VCB0
VCER
VEB0
IC
ICM
Ptot
Tj
Tstg
Values
Unit
300
V
300
300
5
50
mA
100
1
W
150
˚C
– 65 … + 150
Rth JA
Rth JS
≤ 90
≤ 30
K/W
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91