BFN16 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

NPN Silicon High-Voltage Transistors
q Suitable for video output stages in TV sets
and switching power supplies
q High breakdown voltage
q Low collector-emitter saturation voltage
q Complementary types: BFN 17, BFN 19 (PNP)
BFN 16
BFN 18
Type
BFN 16
BFN 18
Marking
DD
DE
Ordering Code
(tape and reel)
Q62702-F885
Q62702-F1056
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 130 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Rth JA
Rth JS
Pin Configuration
1
2
3
B
C
E
Package¹⁾
SOT-89
Values
Unit
BFN 16 BFN 18
250
300
V
250
300
5
200
mA
500
100
200
1
W
150
˚C
– 65 … + 150
≤ 75
K/W
≤ 20
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91