BF998 Datasheet, PDF (1/8 Pages) NXP Semiconductors – Silicon N-channel dual-gate MOS-FETs

Silicon N Channel MOSFET Tetrode
Features
q Short-channel transistor
with high S/C quality factor
q For low-noise, gain-controlled
input stages up to 1 GHz
BF 998
Type
BF 998
Marking
MO
Ordering Code
(tape and reel)
Q62702-F1129
Pin Configuration
1 2 34
S D G2 G1
Package¹⁾
SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate 1/gate 2 peak source current
Total power dissipation, TS < 76 ˚C
Storage temperature range
Channel temperature
Symbol
VDS
ID
± IG1/2SM
Ptot
Tstg
Tch
Values
Unit
12
V
30
mA
10
200
mW
– 55 … + 150 ˚C
150
Thermal Resistance
Junction - soldering point
Rth JS
< 370
K/W
1) _{For detailed information see chapter Package Outlines.}
Semiconductor Group
1
04.96