BF660 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PNP Silicon RF Transistor (For VHF oscillator applications)

PNP Silicon RF Transistor
q For VHF oscillator applications
BF 660
Type
BF 660
Marking
LEs
Ordering Code
(tape and reel)
Q62702-F982
Pin Configuration
1
2
3
B
E
C
Package¹⁾
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Emitter current
Total power dissipation, TA ≤ 25 ˚C
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEB0
IC
IE
Ptot
Tj
Tstg
Values
Unit
30
V
40
4
25
mA
30
280
mW
150
˚C
– 65 … + 150
Thermal Resistance
Junction - ambient²⁾
Rth JA
≤ 450
K/W
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.}
Semiconductor Group
1
07.94