BF543 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

Silicon N Channel MOS FET Triode
Preliminary Data
q For RF stages up to 300 MHz
preferably in FM applications
q IDSS = 4 mA, gfs = 12 mS
BF 543
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BF 543
Marking
LDs
Ordering Code
(tape and reel)
Q62702-F1372
Pin Configuration
1
2
3
G
D
S
Package¹⁾
SOT-23
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Total power dissipation, TA ≤ 60 ˚C
Storage temperature range
Channel temperature
Ambient temperature range
Symbol
VDS
ID
± IGSM
Ptot
Tstg
Tch
TA
Values
Unit
20
V
30
mA
10
200
mW
– 55 … + 150 ˚C
150
– 55 … + 150
Thermal Resistance
Junction - ambient²⁾
Rth JA
≤ 450
K/W
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.}
Semiconductor Group
1
07.94