BF2040W Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

Silicon N-Channel MOSFET Tetrode
Preliminary data
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
BF 2040W
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code Pin Configuration
BF 2040W NCs
Q62702-F1776
1 = D 2 = S 3 = G1 4 = G2
Package
SOT-343
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, T_S = 94 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
V_DS
I_D
±I_G1/2SM
+V_G1SE
P_tot
T_stg
T_ch
R_thchs
Value
Unit
14
V
40
mA
10
7
V
200
mW
-55 ...+150
°C
150
≤280
K/W
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