BF2000W Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Silicon N Channel MOSFET Tetrode
Target data sheet
• Short-channel transistor
with high S/C quality factor
• For low-noise, gain-controlled
input stages up to 1 GHz
BF 2000W
3
4
2
1
VPS05605
Type
Marking Ordering Code
BF 2000W NDs
Q62702-F1772
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Total power dissipation, T_S = 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Pin Configuration
Package
1 = D 2 = S 3 = G1 4 = G2 SOT-343
Symbol
V_DS
I_D
±I_G1/2SM
P_tot
T_stg
T_ch
R_thchs
Value
Unit
12
V
30
mA
10
200
mW
- 55 ...+150
°C
150
≤280
K/W
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