BF1009S Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 9V
• Integrated bias network
BF 1009S
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BF 1009S JLs
Q62702-F1628 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, T_S ≤ 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
V_DS
I_D
±I_G1/2SM
+V_G1SE
P_tot
T_stg
T_ch
R_thchs
Value
Unit
12
V
25
mA
10
3
V
200
mW
-55 ...+150
°C
150
≤370
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
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