BCR116 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R₁=4.7kΩ, R₂=47kΩ)
BCR 116
Type
BCR 116
Marking Ordering Code Pin Configuration
WGs Q62702-C2337 1 = B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T_S = 102°C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
Values
50
50
5
15
100
200
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient ¹⁾
Junction - soldering point
R_thJA
R_thJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm² Cu
≤ 350
K/W
≤ 240
Semiconductor Group
1
Dec-18-1996