BCR108S Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
• Two (galvanic) internal isolated Transistors
in on package
• Built in bias resistor (R₁=2.2kΩ, R₂=47kΩ)
BCR 108S
Type
Marking Ordering Code Pin Configuration
Package
BCR 108S WHs Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T_S = 115°C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
Values
50
50
5
10
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient ¹⁾
Junction - soldering point
R_thJA
R_thJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm² Cu
≤ 275
K/W
≤ 140
Semiconductor Group
1
Nov-26-1996