BC617 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors (High current gain High collector current)

NPN Silicon Darlington Transistors
q High current gain
q High collector current
BC 617
BC 618
BC 617
BC 618
2
3
1
Type
BC 617
BC 618
Marking
–
Ordering Code
Q62702-C1137
Q62702-C1138
Pin Configuration
1
2
3
C
B
E
Package¹⁾
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case²⁾
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BC 617
BC 618
40
55
50
80
12
500
800
100
200
625
150
– 65 … + 150
Unit
V
mA
mW
˚C
Rth JA
Rth JC
≤ 200
K/W
≤ 135
1) _{For detailed information see chapter Package Outlines.}
2) _{Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.}
Semiconductor Group
1
5.91