BC369 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP medium power transistor

PNP Silicon AF Transistor
q High current gain
q High collector current
q Low collector-emitter saturation voltage
q Complementary type: BC 368 (NPN)
BC 369
2
3
1
Type
BC 369
Marking
–
Ordering Code
C62702-C748
Pin Configuration
1
2
3
E
C
B
Package¹⁾
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 90 ˚C²⁾
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - case³⁾
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
Unit
20
V
25
5
1
A
2
100
mA
200
0.8 (1)
W
150
˚C
– 65 … + 150
Rth JA
Rth JC
≤ 156
K/W
≤ 75
1) _{For detailed information see chapter Package Outlines.}
2) _{If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for}
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) _{Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.}
Semiconductor Group
1
5.91