BAW78A-BAW79D Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)

Silicon Switching Diodes
q For high-speed switching
q High breakdown voltage
q Common cathode
BAW 79 A
… BAW 79 D
Type
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
Marking
GE
GF
GG
GH
Ordering Code
(tape and reel)
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
Pin Configuration
Package¹⁾
SOT-89
Maximum Ratings per Diode
Parameter
Symbol
BAW
Reverse voltage
VR
50
Peak reverse voltage
VRM
50
Forward current
IF
Peak forward current
IFM
Surge forward current
IFS
t = 1 µs
Total power dissipation
Ptot
TS = 115 ˚C
Junction temperature
Tj
Storage temperature range Tstg
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Rth JA
Rth JS
Values
BAW
BAW
100
200
100
200
1
1
10
1
150
– 65 … + 150
BAW
400
400
≤ 175
≤ 35
Unit
V
A
W
˚C
K/W
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91