BAW56 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

Silicon Switching Diode Array
q For high-speed switching applications
q Common anode
BAW 56
Type
BAW 56
Marking
A1s
Ordering Code
(tape and reel)
Q62702-A688
Pin Configuration
Package¹⁾
SOT-23
Maximum Ratings per Diode
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 31 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Values
Unit
70
V
70
200
mA
4.5
A
330
mW
150
˚C
– 65 … + 150
Rth JA
Rth JS
≤ 500
K/W
≤ 360
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91