BAV99 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

Silicon Switching Diode Array
Features
q For high-speed switching
q Connected in series
BAV 99
Type
BAV 99
Marking
A7s
Ordering Code
(tape and reel)
Q68000-A549
Pin Configuration
Package¹⁾
SOT-23
Maximum Ratings per Diode
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 31 ˚C
Junction temperature
Storage temperature range
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Values
Unit
70
V
70
200
mA
4.5
A
330
mW
150
˚C
– 65 … + 150
1)_{For detailed information see chapter Package Outlines.}
Semiconductor Group
1
04.96