BAV70S Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode array

Silicon Switching Diode Array
• For high speed switching applications
• Common cathode
• Internal (galvanic) isolated Diodes Arrays
in one package
BAV 70S
Type
BAV 70S
Marking Ordering Code
A4s
Q62702-A1097
Pin Configuration
Package
1/4=A1 2/5=A2 3/6=C1/2 SOT-363
Maximum Ratings per Diode
Parameter
Symbol
Diode reverse voltage
V_R
Peak reverse voltage
V_RM
Forward current
I_F
Surge forward current, t = 1 µs
I_FS
Total Power dissipation
P_tot
T_S = 85 °C
Junction temperature
T_j
Storage temperature
T_stg
Thermal Resistance
Junction ambient ¹⁾
Junction - soldering point
R_thJA
R_thJS
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm² Cu
Values Unit
70
V
70
200
mA
4.5
A
mW
250
150
°C
- 65 ... + 150
≤ 530
K/W
≤ 260
Semiconductor Group
1
Nov-28-1996