BAV70 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

Silicon Switching Diode Array
q For high-speed switching
q Common cathode
BAV 70
Type
BAV 70
Marking
A4s
Ordering Code
(tape and reel)
Q68000-A6622
Pin Configuration
Package¹⁾
SOT-23
Maximum Ratings per Diode
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 35 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Values
Unit
70
V
70
200
mA
4.5
A
250
mW
150
˚C
– 65 … + 150
Rth JA
Rth JS
≤ 600
K/W
≤ 460
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2_.
Semiconductor Group
1
5.91