BAS16S Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package)

Silicon Switching Diode Array
• For high-speed switching applications
• Internal (galvanic) isolated Diodes
in one package
Tape loading orientation
BAS 16S
4
5
6
3
2
1
VPS05604
Type
Marking Ordering Code Pin Configuration
Package
BAS 16S A6s Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, T_S = 85 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - ambient ¹⁾
Junction - soldering point
Symbol
V_R
V_RM
I_F
I_FS
P_tot
T_j
T_stg
R_thJA
R_thJS
Value
Unit
75
V
85
200
mA
4.5
A
250
mW
150
°C
65 ...+150
≤ 530
K/W
≤ 260
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
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