BAS125W Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)

Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
BAS 125W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code Pin Configuration
Package
BAS 125-04W 14s
Q62702-
1 = A1 2 = C2 3=C1/A2 SOT-323
BAS 125-05W 15s
Q62702-
1 = A1 2 = A2 3=C1/C2 SOT-323
BAS 125-06W 16s
Q62702-
1 = C1 2 = C2 3=A1/A2 SOT-323
BAS 125W
13s
Q62702-
1=A
3 = C SOT-323
Maximum Ratings
Parameter
Symbol
Values Unit
Diode reverse voltage
Forward current
Surge forward current (t ≤ 10ms)
Total Power dissipation
T_S ≤ 25 °C
Junction temperature
Storage temperature
V_R
I_F
I_FSM
P_tot
T_j
T_stg
25
V
100
mA
500
mW
250
150
°C
- 55 ... + 150
Thermal Resistance
Junction ambient, BAS125W 1)
Junction ambient, BAS 125-04W...06W 1)
Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
R_thJA
R_thJA
R_thJS
R_thJS
≤ 310
K/W
≤ 425
≤ 230
≤ 265
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Dec-20-1996