BAS125-07W Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)

Silicon Schottky Diode
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
BAS 125-07W
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BAS 125-07W 17s
Q62702-D1347 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current (t< 100µs)
Total power dissipation, T_S = 25 °C
Junction temperature
Storage temperature
Symbol
V_R
I_F
I_FSM
P_tot
T_j
T_stg
Value
Unit
25
V
100
mA
500
250
mW
150
°C
- 55 ...+150
Maximum Ratings
Junction - ambient ¹⁾
Junction - soldering point
R_thJA
R_thJS
≤ 725
K/W
≤ 565
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
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