BAS116 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Low-leakage diode

Silicon Low Leakage Diode
q Low-leakage applications
q Medium speed switching times
q Single diode
BAS 116
Type
BAS 116
Marking
JVs
Ordering Code
(tape and reel)
Q62702-A919
Pin Configuration
Package¹⁾
SOT-23
Maximum Ratings
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 54 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Values
Unit
75
V
85
250
mA
4.5
A
370
mW
150
˚C
– 65 … + 150
Rth JA
Rth JS
≤ 330
K/W
≤ 260
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91