BAR81W Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode
Preliminary data
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
BAR 81W
3
4
2
1
VPS05605
Type
BAR 81W
Marking Ordering Code Pin Configuration
Package
BBs
Q62702-A1270 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, T_S = 138 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient ¹⁾
Junction - soldering point
Symbol
V_R
I_F
P_tot
T_j
T_op
T_stg
R_thJA
R_thJS
Value
Unit
30
V
100
mA
100
mW
150
°C
-55 ...+125
°C
-55 ...+150
≤ 200
K/W
≤ 120
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
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