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BAR81 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
Silicon RF Switching Diode
Preliminary data
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
BAR 81
Type
BAR 81
Marking Ordering Code
BBs
Q62702-A1145
Pin Configuration
Package
1 = C 2 = A 3 = C 4 = A MW-4
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
VR
IF
Top
Tstg
Values
30
100
- 55 ... + 125
- 55 ... + 150
Unit
V
mA
°C
Semiconductor Group
1
Feb-26-1996