6N135 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – IRED & PHOTO IC (DIGITAL LOGIC ISOLATION)

FEATURES
• Isolation Test Voltage: 2500 VAC_RMS
• TTL Compatible
• High Bit Rates: 1 Mbit/s
• High Common-Mode Interference Immunity
• Bandwidth 2 MHz
• Open-Collector Output
• External Base Wiring Possible
• Field-Effect Stable by TRIOS*
• Underwriters Lab File #E52744
DESCRIPTION
The 6N135 and 6N136 are optocouplers with a
GaAIAs infrared emitting diode, optically coupled
with an integrated photodetector which consists of
a photodiode and a high-speed transistor in a DIP-
8 plastic package.
Signals can be transmitted between two electri-
cally separated circuits up to frequencies of 2
MHz. The potential difference between the circuits
to be coupled is not allowed to exceed the maxi-
mum permissible reference voltages.
Maximum Ratings
Emitter
Reverse Voltage .................................................5 V
Forward Current ............................................25 mA
Peak Forward Current
(t =1 ms, duty cycle 50%) ............................50 mA
Maximum Surge Forward Current
(t ≤1 µs, 300 pulses/s).......................................1 A
Thermal Resistance................................... 700 K/W
Total Power Dissipation (T_A≤70°C) ...............45 mW
Detector
Supply Voltage ..................................... –0.5 to 15 V
Output Voltage .................................... –0.5 to 15 V
Emitter-Base Voltage ......................................... 5 V
Output Current.................................................8 mA
Maximum Output Current ..............................16 mA
Base Current .................................................. 5 mA
Thermal Resistance................................... 300 K/W
Total Power Dissipation (T_A≤70°C) .............100 mW
Package
Isolation Test Voltage (between emitter and
detector climate per DIN 40046,
part 2, Nov. 74 (t=1min.) ............... 2500 VAC_RMS
Pollution Degree (DIN VDE 0109) ......................... 2
Creepage ...........................................................≥7 mm
Clearance ...........................................................≥7 mm
Comparative Tracking Index per
DIN IEC112/VDE 0303 part 1,
Group IIIa per DIN VDE 6110 ........................ 175
Isolation Resistance
V_IO=500 V, T_A = 25°C ............................... ≥10¹² Ω
V_IO=500 V, T_A = 100°C ............................. ≥10¹¹ Ω
Storage Temperature Range ....... –55°C to +125°C
Ambient Temperature Range ...... –55°C to +100°C
Soldering Temperature (max. ≤10 sec.,
dip soldering ≥0.5 mm from
case bottom).............................................. 260°C
*TRIOS—TRansparent IOn Shield
6N135
6N136
HIGH-SPEED 2.5 kV TRIOS®
OPTOCOUPLER
Dimensions in inches (mm)
43 21
.268 (6.81)
.255 (6.48)
56 78
.390 (9.91)
.379 (9.63)
Pin
One
I.D. _{NC 1}
Anode ²
Cathode ³
NC ⁴
8
Cathode
(V_CC)
7 ^Base
(V_B)
6 ^Collector
(V_O)
5 Emitter
(GND)
.045 (1.14)
.030 (.76)
.305 typ.
(7.75) typ.
4°
Typ.
.022 (.56)
.018 (.46)
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.100 (2.54)
Typ.
10 °
Typ.
3°–9° _{.012 (.30)}
.008 (.20)
.135 (3.43)
.115 (2.92)
Characteristics (T_A=0 to 70°C unless otherwise specified, T_A=25°C typ.)
Emitter
Symbol
Unit Condition
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Temperature Coeffi-
cient, Forward Voltage
Detector
V_F
V_BR
I_R
C_O
∆V_F /∆T_A
1.6 (≤1.9) V
≥5
V
0.5 (≤10) µA
125
pF
I_F=16 mA
I_R=10 µA
V_R=5 V
V_R=0 V, f=1 MHz
-1.7
mV/°C I_F=16 mA
Supply Current
Logic Low
Supply Current
Logic High
Output Voltage,
Output Low
6N135
6N136
Output Current,
Output High
Output Current,
Output High
Current Gain
Package
I_CCL
I_CCH
V_OL
V_OL
I_CH
I_CH
H_FE
150
µA
0.01 (≤1) µA
0.1 (≤0.4) V
0.1 (≤0.4) V
3 (≤500) nA
0.01 (≤1) µA
150
I_F=16 mA, V_O open,
V_CC=15 V
I_F=0 mA, V_O open,
V_CC=15 V
I_F=16 mA,
V_CC=4.5 V
I_O=1.1 mA
I_O=2.4 mA
I_F=0 mA,
V_O=V_CC=5.5 V
I_F=0 mA
V_O=V_CC=15 V
V_O=5 V, I_O=3 mA
Coupling Capacitance
Input-Output
C_IO
0.6
pF
f=1 MHz
Current Transfer Ratio
6N135
6N136
6N135
6N136
5–1
CTR
CTR
CTR
CTR
16 (≥7)
%
35 (≥19) %
≥5
%
≥15
I_F=16 mA, V_O=0.4 V,
V_CC=4.5 V, T_A=25°C
I_F=16 mA, V_O=0.5 V,
V_CC=4.5 V
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