4N39 Datasheet, PDF (1/1 Pages) QT Optoelectronics – PHOTO SCR OPTOCOUPLERS

4N39
PHOTO SCR OPTOCOUPLER
FEATURES
• Turn On Current (I_FT), 5.0 mA Typical
• Gate Trigger Current (I_GT), 20 mA
• Surge Anode Current, 10 Amp
• Blocking Voltage, 200 VAC_PK
• Gate Trigger Voltage (V_GT), 0.6 Volt
• Isolation Voltage, 5300 VAC_RMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be used
in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................6.0 V
Peak Forward Current
(100 µs, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 50°C .........................2 mW/°C
Detector
Reverse Gate Voltage .....................................6.0 V
Anode Peak Blocking Voltage .......................200 V
Peak Reverse Gate Voltage ...............................6 V
Anode Current ............................................ 300 mA
Surge Anode Current (100 µs duration) .......... 10 A
Surge Gate Current (5 ms duration)........... 100 mA
Power Dissipation, 25°C ambient ..............400 mW
Derate Linearly from 25°C .........................8 mW/°C
Package
Isolation Test Voltage (1 sec.) .......... 5300 VAC_RMS
Isolation Resistance
V_IO=500 V, T_A=25°C ...............................≥10¹² Ω
V_IO=500 V, T_A=100°C .............................≥10¹¹ Ω
Total Package Dissipation ..........................450 mW
Derate Linearly from 50°C .........................9 mW/°C
Operating Temperature ................–55°C to +100°C
Storage Temperature....................–55°C to +150°C
Soldering Temperature (10 s.).......................260°C
Package Dimensions in Inches (mm)
Pin One ID.
321
Anode 1
.248 (6.30)
.256 (6.50)
Cathode 2
6 Gate
5 Anode
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC 3
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
4 Cathode
.110 (2.79)
.150 (3.81)
Characteristics (T_A=25°C)
Sym- Min. Typ Max Unit Condition
bol
.
.
Emitter
Forward Voltage
V_F
Reverse Current
I_R
Detector
1.2 1.5 V
I_F=20 mA
10 µA V_R=5 V
Forward Blocking
Voltage
Reverse Blocking
Voltage
V_DM 200
V_RM 200
V
R_GK=10 KΩ
T_A=100°C
V
I_d=150 µA
On-state Voltage
V_TM
Holding Current
I_H
Gate Trigger
V_GT
Voltage
Forward Leakage
I_DM
Current
Reverse Leakage
I_RM
Current
Package
1.2 V
200 µA
0.6 1.0 V
50 µA
50 µA
I_TM=300 mA
R_GK=27 KΩ
V_FX=50 V
V_FX=100 V
R_GK=27 KΩ
R_L=10 KΩ
R_GK=10 KΩ
V_RX=200 V
I_F=0,
T_A=100°C
R_GK=27 KΩ
V_RX=200 V
I_F=0,
T_A=100°C
Turn-0n Current
I_FT
Isolation Capaci-
tance
15 30
8 14
2
mA V_FX=50 V
R_GK=10 KΩ
V_FX=100 V
R_GK=27 KΩ
pF f=1 MHz
5–36