ZXTN25060BZQ Datasheet, PDF (5/8 Pages) Diodes Incorporated – 60V NPN MEDIUM POWER TRANSISTOR

ZXTN25060BZQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Forward
Blocking)
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage (Reverse
Blocking)
Emitter-Collector Breakdown Voltage (Base Open)
Collector-Base Cutoff Current
Symbol
Min
Typ
BVCBO
150
190
BVCEX
150
190
BVCEO
60
80
BVEBO
7
8.0
BVECX
6
8
BVECO
6
7
ICBO
—
<1
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICEX
—
IEBO
—
Collector-Emitter Saturation Voltage (Note 12)
VCE(sat)
—
Base-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
DC Current Gain (Note 12)
VBE(sat)
—
VBE(on)
—
100
hFE
90
45
—
Transitional Frequency
fT
—
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
—
td
—
tr
—
ts
—
tf
—
Note:
12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
—
<1
55
70
185
240
1,020
960
200
180
90
20
185
11.5
16
15
509
57
Max
—
—
—
—
—
—
50
20
100
50
70
90
230
305
1,100
1,050
300
—
—
—
—
20
—
—
—
—
Unit
V
V
V
V
V
V
nA
µA
nA
nA
mV
mV
mV
—
MHz
pF
ns
ns
ns
ns
Test Condition
IC = 100µA
IC = 100µA, RBE <1kΩ or
-1V < VBE <0.25V
IC = 10mA
IE = 100µA
IE = 100µA, RBC <1kΩ or
<0.25V > VBC >0.25V
IE = 100µA
VCB = 120V
VCB = 120V, TA = +100°C
VCE = 120V, RBE <1kΩ or
-1V < VBE <0.25V
VEB = 5.6V
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
IC = 4A, IB = 400mA
IC = 5A, IB = 500mA
IC = 5A, IB = 500mA
IC = 5A, VCE = 2V
IC = 10mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 50V
IC = 5A, VCE = 5V
IC = 100mA, VCE = 5V
f=100MHz
VCB= 10V, f=1MHz
VCC = 10V,
ICC = 500mA
IB1 = - IB2 = 50mA
ZXTN25060BZQ
Document number: DS38348 Rev. 1 - 2
5 of 8
www.diodes.com
October 2015
© Diodes Incorporated