ZXTP25020DG_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V PNP MEDIUM POWER HIGH GAIN TRANSISTOR

ZXTP25020DG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
-25
-55
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
-20
-45
Emitter-Base Breakdown Voltage
BVEBO
-7
-8.3
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter Cut-Off Current
BVECO
-4
-8.5
ICBO
—
<1
IEBO
—
<1
DC Current Gain (Note 11)
300
450
200
310
hFE
25
50
—
20
—
—
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
—
—
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Input Capacitance
Output Capacitance
VBE(sat)
—
VBE(on)
—
Cibo
—
Cobo
—
-50
-150
-190
-250
-1.05
-0.91
157
21
Current Gain-Bandwidth Product
fT
—
290
Delay Time
Rise Time
Turn-On Time
Turn-Off Time
td
—
14.2
tr
—
16.3
ts
—
186
tf
—
32.7
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Max
—
—
—
—
50
100
900
—
—
—
-65
-215
-245
-355
-1.15
-1
400
30
—
—
—
—
—
Unit
V
V
V
V
nA
nA
—
mV
V
V
pF
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
IE = -100µA
VCB = -25V
VEB = -5.6V
IC = -10mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -6A, VCE = -2V
IC = -10A, VCE = -2V
IC = -1A, IB = -100mA
IC = -1A, IB = -10mA
IC = -2A, IB = -40mA
IC = -6A, IB = -600mA
IC = -6A, IB = -600mA
IC = -6A, VCE = -2V
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f=50MHz
VCC = -10V, IC = -1A
IB1 = -IB2 = -50mA
ZXTP25020DG
Document number: DS33751 Rev. 2 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated