ZXTP25020CFF_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V PNP MEDIUM POWER TRANSISTOR

ZXTP25020CFF
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking) (Note 11)
Emitter-Collector Breakdown Voltage
(Base Open) (Note 11)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 11)
Static Forward Current Transfer Ratio
Symbol
BVCBO
BVCEO
BVEBO
BVECX
BVECO
ICBO
IEBO
hFE
Min Typ
-25
-50
-20
-35
-7
-8.2
-7
-8.0
-7
-8.8
—
<-1
—
—
<-1
200 350
150 250
85
140
—
40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
VCE(SAT)
VBE(SAT)
VBE(ON)
-50
—
-80
-135
-210
—
-950
—
-840
Transition Frequency
fT
—
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
COBO
—
tD
—
tR
—
tS
—
tF
—
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
285
32.4
38.4
49.2
168
55
Max
—
—
—
—
—
-50
-20
-50
500
—
—
—
-65
-110
-185
-260
-1,050
-950
—
40
—
—
—
—
Unit
Test Condition
V I_C = -100µA
V I_C = -10mA
V I_E = -100µA
V
IE = -100µA RBC <10k or
-0.25V<VBC<0.25V
V I_E = -100µA
nA VCB = -20V
µA _{VCB = -20V, TA = +100°C}
nA V_EB = -5.6V
IC = -10mA, VCE = -2V
—
IC = -1A, VCE = -2V
IC = -4A, VCE = -2V
IC = -10A, VCE = -2V
IC = -1A, IB = -100mA
mV ^{IC = -1A, IB = -20mA}
IC = -2A, IB = -40mA
IC = -4.5A, IB = -225mA
mV I_C = -4.5A, I_B = -225mA
mV I_C = -4.5A, V_CE = -2V
MHz
pF
ns
ns
ns
ns
IC = -50mA, VCE = -10V,
f = 100MHz
VCB = -10V, f = 1MHz
VCC = -15V,
IC = -750mA,
IB1 = IB2 = -15mA
ZXTP25020CFF
Document number: DS33747 Rev. 2 - 2
4 of 7
www.diodes.com
February 2016
© Diodes Incorporated