ZXTN19100CFF_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTN19100CFF
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Forward Blocking)
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Base Open)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 11)
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol
BVCBO
BVCEX
BVCEO
BVEBO
BVECX
BVECO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
Min Typ
200 240
200 240
100 120
7
8.3
6
8.3
5
8
—
<1
—
—
<1
200 350
130 250
—
25
45
—
105
170
—
950
—
880
Transition Frequency
fT
—
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
CIBO
—
COBO
—
tD
—
tR
—
tS
—
tF
—
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
150
305
15.7
28.3
23.6
962
133
Max
—
—
—
—
—
—
50
20
50
500
—
—
60
135
235
1050
1000
—
—
25
—
—
—
—
Unit
Test Condition
V I_C = 100µA
V
IC = 100µA, RBE < 1k or
-1V < VBE < 0.25V
V I_C = 10mA
V I_E = 100µA
V
IE = 100µA, RBC < 1k or
0.25V < VBC < -0.25V
V I_E = 100µA
nA VCB = 160V
µA _{VCB = 160V, TA = +100°C}
nA V_EB = 5.6V
IC = 100mA, VCE = 2V
— I_C = 1A, V_CE = 2V
IC = 5A, VCE = 2V
IC = 1A, IB = 100mA
mV I_C = 1A, I_B = 20mA
IC = 4.5A, IB = 450mA
mV I_C = 4.5A, I_B = 450mA
mV I_C = 4.5A, V_CE = 2V
MHz
pF
pF
ns
ns
ns
ns
IC = 100mA, VCE = 10V,
f = 50MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCC = 10V,
IC = 500mA,
IB1 = IB2 = 50mA
ZXTN19100CFF
Document number: DS33683 Rev. 2 - 2
4 of 7
www.diodes.com
January 2016
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