ZXTN19060CFF Datasheet, PDF (4/7 Pages) Zetex Semiconductors – 60V, SOT23F, NPN high gain power transistor

ZXTN19060CFF
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Forward Blocking)
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Base Open)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 11)
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol
BVCBO
BVCEX
BVCEO
BVEBO
BVECX
BVECO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
Min
Typ
160
200
160
200
60
75
7
8.3
6
7
6
7
—
<1
—
—
<1
200
350
160
280
30
50
36
—
105
105
145
—
1,000
—
880
Transition Frequency
fT
—
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
CIBO
—
COBO
—
tD
—
tR
—
tS
—
tF
—
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
130
310
19.3
27.3
13.2
682
90.9
Max
—
—
—
—
—
—
50
0.5
50
500
—
—
45
150
135
175
1,100
1,000
—
—
25
—
—
—
—
Unit
Test Condition
V I_C = 100µA
V
IC = 100µA, RBE < 1kΩ or
-1V < VBE < 0.25V
V I_C = 10mA
V I_E = 100µA
V
IE = 100µA, RBC < 1kΩ or
0.25V < VBC < -0.25V
V I_E = 100µA
nA VCB = 160V
µA _{VCB = 160V, TA = +100°C}
nA V_EB = 5.6V
IC = 100mA, VCE = 2V
— I_C = 2A, V_CE = 2V
IC = 6A, VCE = 2V
IC = 1A, IB = 100mA
mV ^{IC = 1A, IB = 10mA}
IC = 2A, IB = 40mA
IC = 5.5A, IB = 550mA
mV I_C = 5.5A, I_B = 550mA
mV I_C =5.5A, V_CE = 2V
MHz
pF
pF
ns
ns
ns
ns
IC = 50mA, VCE = 10V,
f = 50MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCC = 10V,
IC = 500mA,
IB1 = IB2 = 50mA
ZXTN19060CFF
Document number: DS33681 Rev. 3 - 2
4 of 7
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February 2016
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