ZXTN07045EFF_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 45V NPN LOW SATURATION TRANSISTOR

ZXTN07045EFF
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Base Open)
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS (Note 11)
Static Forward Current Transfer Ratio
Symbol
BVCBO
BVCEO
BVEBO
BVECX
BVECO
ICBO
IEBO
hFE
Min Typ
45
160
45
60
7
8.3
6
8.2
6
7.2
—
<1
—
—
<1
500 800
400 710
250 530
70
125
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
45
160
—
60
200
230
— 1000
—
875
Transition Frequency
fT
150
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cibo
—
Cobo
—
td
—
tr
—
ts
—
tf
—
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
190
225
18.4
22.3
10.6
613
146
Max
—
—
—
—
—
50
20
50
1500
—
—
—
70
230
80
270
280
1100
1000
—
—
25
—
—
—
—
Unit
Test Condition
V I_C = 100µA
V I_C = 10mA
V I_E = 100µA
V
IE = 100µA; RBC < 1kΩ or
-0.25V < VBC < 0.25V
V I_E = 100µA
nA VCB = 35V
µA _{VCB = 35V, TA = +100°C}
nA V_EB = 5.6V
IC = 100mA, VCE = 2V
—
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 4A, VCE = 2V
IC = 0.1A, IB = 0.5mA
IC = 1A, IB = 5mA
mV I_C = 1A, I_B = 100mA
IC = 2A, IB = 20mA
IC = 4A, IB = 200mA
mV I_C = 4A, I_B = 200mA
mV I_C = 4A, V_CE = 2V
MHz
pF
pF
ns
ns
ns
ns
IC = 50mA, VCE = 5V,
f = 50MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCC = 10V,
IC = 500mA,
IB1 = IB2 = 50mA
ZXTN07045EFF
Document number: DS33674 Rev. 6 - 2
4 of 7
www.diodes.com
February 2016
© Diodes Incorporated