ZXTN2011G_16 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

Thermal Characteristics and Derating Information
ZXTN2011G
10 V
CE(sat)
Limit
1
DC
100m
1s
100ms
10ms
Single Pulse. T =25°C
amb
10m
See note (5)
1ms
100µs
100m
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
3.0
2.5
2.0
See note (5)
1.5
1.0
See note (6)
0.5
0.0
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
40 See note (5)
30
D=0.5
20
D=0.2
10
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
See note (5)
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN2011G
Document number: DS33662 Rev. 3 - 2
3 of 7
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January 2016
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