MTB013N10RJ3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C056J3
Issued Date : 2016.11.02
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=0.5mH, ID=33 Amps,
VDD=50V
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
(Note 1)
(Note 1)
(Note 4)
(Note 4)
(Note 3)
(Note 5)
(Note 5)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
100
±20
42
29.7
9
7.2
168
42
272
60
30
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C/W
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
2.5
Thermal Resistance, Junction-to-ambient, max (Note2)
Thermal Resistance, Junction-to-ambient, max (Note4)
RθJA
50
°C/W
110
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
5. 100% tested by condition of VDD=25V, ID=10A, L=2mH, VGS=10V.
MTB013N10RJ3
CYStek Product Specification